3N90-E datasheet, mosfet equivalent, Unisonic Technologies

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Features and benefits

* RDS(ON) < 6.2Ω @ VGS=10V, ID=1.5A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness
* SYMBOL Power MOSFET
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Application

* FEATURES * RDS(ON) < 6.2Ω @ VGS=10V, ID=1.5A * Fast Switching Capability * Avalanche Energy Specified * Improved .

Description

The UTC 3N90-E provides excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.
* FEATURES * RDS(ON) < 6.2Ω @ VGS=10V, ID=1.5A * Fast Switching Capability *.

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